The effect of substrate distance to evaporation source on morphology of ZnO:In nanorods fabricated by means of a vapor transfer route and the study of their optical and electrical properties
Identifieur interne : 000018 ( Main/Repository ); précédent : 000017; suivant : 000019The effect of substrate distance to evaporation source on morphology of ZnO:In nanorods fabricated by means of a vapor transfer route and the study of their optical and electrical properties
Auteurs : RBID : Pascal:14-0096399Descripteurs français
- Pascal (Inist)
- Evaporation, Morphologie, Nanobâtonnet, Nanomatériau, Synthèse nanomatériau, Propriété optique, Propriété électrique, Addition indium, Nanostructure, Couche mince, Réseau hexagonal, Spectrométrie dispersive, Zinc, Indium, Polycristal, Monocristal, Matériau poreux, Spectrométrie transformée Fourier, Diffraction RX, Diffraction électron sélection aire, Orientation préférentielle, Photoluminescence, Mesure électrique, Conductivité électrique, Caractéristique courant tension, Optoélectronique, Nanoélectronique, Substrat ZnO, ZnO, Substrat silicium, 6865, 8107D, 8107B, 8116.
- Wicri :
- concept : Zinc.
English descriptors
- KwdEn :
- Dispersive spectrometry, Electrical conductivity, Electrical measurement, Electrical properties, Evaporation, Fourier transform spectroscopy, Hexagonal lattices, IV characteristic, Indium, Indium additions, Monocrystals, Morphology, Nanoelectronics, Nanomaterial synthesis, Nanorod, Nanostructured materials, Nanostructures, Optical properties, Optoelectronics, Photoluminescence, Polycrystals, Porous materials, Preferred orientation, SAED, Thin films, XRD, Zinc.
Abstract
High-quality polycrystalline and single crystalline Indium-doped ZnO (ZnO:In) nanorods (NRs) have been synthesized on Si (100) substrates via a vapor transfer route in an oxygen-rich tube furnace. The morphology of the nanostructures and their distribution on the surface is highly related to distance between the substrate and evaporation sources. The morphology can be adjusted from micro-porous film to the vertically aligned hexagonal NRs by this distance. The diameter of the grown NRs varies between 50 and 200 nm, and their length mostly changes from 1 to 3 mm. EDS analysis indicated the presence of zinc, oxygen, and indium in the structures. FTIR measurements confirmed the existence of Zn-O and In-O bands in ZnO:In NRs. X-ray diffractions and SAED patterns showed that the vertically aligned hexagonal NRs have a preferential orientation along the (002) direction. Room-temperature photoluminescence (PL) spectra of NRs are dominated by a green band emission between 420 and 700 nm. The peak of the green emission has shifted in different samples, which is probably due to indium impurity. The results of the electrical transport measurement of the NRs showed that the amount of In impurity is effective in the increase of samples' conductivity.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The effect of substrate distance to evaporation source on morphology of ZnO:In nanorods fabricated by means of a vapor transfer route and the study of their optical and electrical properties</title><author><name sortKey="Ghafouri, Vahid" uniqKey="Ghafouri V">Vahid Ghafouri</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Research Institute of Applied Sciences, Academic Center of Education, Culture and Research (ACECR), Shahid Beheshti University, P. O. Box 19615-1171</s1><s2>Tehran</s2><s3>IRN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Iran</country><wicri:noRegion>Tehran</wicri:noRegion></affiliation></author><author><name sortKey="Shariati, Mohsen" uniqKey="Shariati M">Mohsen Shariati</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Research Institute of Applied Sciences, Academic Center of Education, Culture and Research (ACECR), Shahid Beheshti University, P. O. Box 19615-1171</s1><s2>Tehran</s2><s3>IRN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Iran</country><wicri:noRegion>Tehran</wicri:noRegion></affiliation></author><author><name sortKey="Ebrahimzad, Akbar" uniqKey="Ebrahimzad A">Akbar Ebrahimzad</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Research Institute of Applied Sciences, Academic Center of Education, Culture and Research (ACECR), Shahid Beheshti University, P. O. Box 19615-1171</s1><s2>Tehran</s2><s3>IRN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Iran</country><wicri:noRegion>Tehran</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0096399</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0096399 INIST</idno><idno type="RBID">Pascal:14-0096399</idno><idno type="wicri:Area/Main/Corpus">000026</idno><idno type="wicri:Area/Main/Repository">000018</idno></publicationStmt><seriesStmt><idno type="ISSN">1388-0764</idno><title level="j" type="abbreviated">J. nanopart. res.</title><title level="j" type="main">Journal of nanoparticle research</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Dispersive spectrometry</term><term>Electrical conductivity</term><term>Electrical measurement</term><term>Electrical properties</term><term>Evaporation</term><term>Fourier transform spectroscopy</term><term>Hexagonal lattices</term><term>IV characteristic</term><term>Indium</term><term>Indium additions</term><term>Monocrystals</term><term>Morphology</term><term>Nanoelectronics</term><term>Nanomaterial synthesis</term><term>Nanorod</term><term>Nanostructured materials</term><term>Nanostructures</term><term>Optical properties</term><term>Optoelectronics</term><term>Photoluminescence</term><term>Polycrystals</term><term>Porous materials</term><term>Preferred orientation</term><term>SAED</term><term>Thin films</term><term>XRD</term><term>Zinc</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Evaporation</term><term>Morphologie</term><term>Nanobâtonnet</term><term>Nanomatériau</term><term>Synthèse nanomatériau</term><term>Propriété optique</term><term>Propriété électrique</term><term>Addition indium</term><term>Nanostructure</term><term>Couche mince</term><term>Réseau hexagonal</term><term>Spectrométrie dispersive</term><term>Zinc</term><term>Indium</term><term>Polycristal</term><term>Monocristal</term><term>Matériau poreux</term><term>Spectrométrie transformée Fourier</term><term>Diffraction RX</term><term>Diffraction électron sélection aire</term><term>Orientation préférentielle</term><term>Photoluminescence</term><term>Mesure électrique</term><term>Conductivité électrique</term><term>Caractéristique courant tension</term><term>Optoélectronique</term><term>Nanoélectronique</term><term>Substrat ZnO</term><term>ZnO</term><term>Substrat silicium</term><term>6865</term><term>8107D</term><term>8107B</term><term>8116</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Zinc</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">High-quality polycrystalline and single crystalline Indium-doped ZnO (ZnO:In) nanorods (NRs) have been synthesized on Si (100) substrates via a vapor transfer route in an oxygen-rich tube furnace. The morphology of the nanostructures and their distribution on the surface is highly related to distance between the substrate and evaporation sources. The morphology can be adjusted from micro-porous film to the vertically aligned hexagonal NRs by this distance. The diameter of the grown NRs varies between 50 and 200 nm, and their length mostly changes from 1 to 3 mm. EDS analysis indicated the presence of zinc, oxygen, and indium in the structures. FTIR measurements confirmed the existence of Zn-O and In-O bands in ZnO:In NRs. X-ray diffractions and SAED patterns showed that the vertically aligned hexagonal NRs have a preferential orientation along the (002) direction. Room-temperature photoluminescence (PL) spectra of NRs are dominated by a green band emission between 420 and 700 nm. The peak of the green emission has shifted in different samples, which is probably due to indium impurity. The results of the electrical transport measurement of the NRs showed that the amount of In impurity is effective in the increase of samples' conductivity.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1388-0764</s0></fA01><fA03 i2="1"><s0>J. nanopart. res.</s0></fA03><fA05><s2>16</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>The effect of substrate distance to evaporation source on morphology of ZnO:In nanorods fabricated by means of a vapor transfer route and the study of their optical and electrical properties</s1></fA08><fA11 i1="01" i2="1"><s1>GHAFOURI (Vahid)</s1></fA11><fA11 i1="02" i2="1"><s1>SHARIATI (Mohsen)</s1></fA11><fA11 i1="03" i2="1"><s1>EBRAHIMZAD (Akbar)</s1></fA11><fA14 i1="01"><s1>Research Institute of Applied Sciences, Academic Center of Education, Culture and Research (ACECR), Shahid Beheshti University, P. O. Box 19615-1171</s1><s2>Tehran</s2><s3>IRN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s2>2309.1-2309.18</s2></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>28202</s2><s5>354000501191800280</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>2 p.1/4</s0></fA45><fA47 i1="01" i2="1"><s0>14-0096399</s0></fA47><fA60><s1>P</s1><s3>PR</s3></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of nanoparticle research</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>High-quality polycrystalline and single crystalline Indium-doped ZnO (ZnO:In) nanorods (NRs) have been synthesized on Si (100) substrates via a vapor transfer route in an oxygen-rich tube furnace. The morphology of the nanostructures and their distribution on the surface is highly related to distance between the substrate and evaporation sources. The morphology can be adjusted from micro-porous film to the vertically aligned hexagonal NRs by this distance. The diameter of the grown NRs varies between 50 and 200 nm, and their length mostly changes from 1 to 3 mm. EDS analysis indicated the presence of zinc, oxygen, and indium in the structures. FTIR measurements confirmed the existence of Zn-O and In-O bands in ZnO:In NRs. X-ray diffractions and SAED patterns showed that the vertically aligned hexagonal NRs have a preferential orientation along the (002) direction. Room-temperature photoluminescence (PL) spectra of NRs are dominated by a green band emission between 420 and 700 nm. The peak of the green emission has shifted in different samples, which is probably due to indium impurity. The results of the electrical transport measurement of the NRs showed that the amount of In impurity is effective in the increase of samples' conductivity.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60H65</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A07D</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A07B</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A16</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Evaporation</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Evaporation</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Morphologie</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Morphology</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Nanobâtonnet</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Nanorod</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Nanopalito</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Synthèse nanomatériau</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Nanomaterial synthesis</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Síntesis nanomaterial</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Propriété optique</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Optical properties</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Propriété électrique</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Electrical properties</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Addition indium</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Indium additions</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Nanostructure</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Nanostructures</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Couche mince</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Thin films</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Réseau hexagonal</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Hexagonal lattices</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Spectrométrie dispersive</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Dispersive spectrometry</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Espectrometría dispersiva</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Zinc</s0><s2>NC</s2><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Zinc</s0><s2>NC</s2><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Indium</s0><s2>NC</s2><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Indium</s0><s2>NC</s2><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Polycristal</s0><s5>15</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Polycrystals</s0><s5>15</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Monocristal</s0><s5>16</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Monocrystals</s0><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Matériau poreux</s0><s5>17</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Porous materials</s0><s5>17</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Spectrométrie transformée Fourier</s0><s5>29</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Fourier transform spectroscopy</s0><s5>29</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>30</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>XRD</s0><s5>30</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Diffraction électron sélection aire</s0><s5>31</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>SAED</s0><s5>31</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Orientation préférentielle</s0><s5>32</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>Preferred orientation</s0><s5>32</s5></fC03><fC03 i1="21" i2="X" l="SPA"><s0>Orientación preferencial</s0><s5>32</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>33</s5></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>33</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>Mesure électrique</s0><s5>34</s5></fC03><fC03 i1="23" i2="X" l="ENG"><s0>Electrical measurement</s0><s5>34</s5></fC03><fC03 i1="23" i2="X" l="SPA"><s0>Medida eléctrica</s0><s5>34</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>35</s5></fC03><fC03 i1="24" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>35</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>Caractéristique courant tension</s0><s5>36</s5></fC03><fC03 i1="25" i2="3" l="ENG"><s0>IV characteristic</s0><s5>36</s5></fC03><fC03 i1="26" i2="X" l="FRE"><s0>Optoélectronique</s0><s5>37</s5></fC03><fC03 i1="26" i2="X" l="ENG"><s0>Optoelectronics</s0><s5>37</s5></fC03><fC03 i1="26" i2="X" l="SPA"><s0>Optoelectrónica</s0><s5>37</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>Nanoélectronique</s0><s5>38</s5></fC03><fC03 i1="27" i2="3" l="ENG"><s0>Nanoelectronics</s0><s5>38</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>Substrat ZnO</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="29" i2="3" l="FRE"><s0>ZnO</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="30" i2="3" l="FRE"><s0>Substrat silicium</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="31" i2="3" l="FRE"><s0>6865</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="32" i2="3" l="FRE"><s0>8107D</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="33" i2="3" l="FRE"><s0>8107B</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="34" i2="3" l="FRE"><s0>8116</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>132</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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